Mobility Extraction for Nanotube TFTs

• An extensive investigation of carrier mobility is presented for thin-film transistors (TFTs) with single-walled carbon nanotube (SWCNT) networks as the semiconductor channel. For TFTs particularly with low-density SWCNTs in the networks, the extracted mobility using the standard method for Si metal-oxide-semiconductor field-effect transistors is erroneous, mainly resulting from use of a parallel-plate capacitor model and assumption of the source-drain current being inversely proportional to the channel length. Large hysteresis in the transfer characteristics further complicates the extraction. By properly addressing all these challenges in this letter, a comprehensive methodology is established, leading to the extraction of mobility values that are independent of geometrical parameters.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Maskinteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Mechanical Engineering (hsv//eng)

Keyword

Carbon nanotube network

carrier mobility

current exponent

gate capacitance

hysteresis

TECHNOLOGY

TEKNIKVETENSKAP

Engineering Science with specialization in Electronics

Teknisk fysik med inriktning mot elektronik

Engineering mechanics

Publication and Content Type

ref (subject category)

art (subject category)