Sökning: onr:"swepub:oai:DiVA.org:uu-158898" >
Pressure-induced to...
Pressure-induced topological insulating behavior in the ternary chalcogenide Ge(2)Sb(2)Te(5)
-
Sa, Baisheng (författare)
-
Zhou, Jian (författare)
-
Song, Zhitang (författare)
-
visa fler...
-
Sun, Zhimei (författare)
-
- Ahuja, Rajeev (författare)
- Uppsala universitet,Materialteori
-
visa färre...
-
(creator_code:org_t)
- 2011
- 2011
- Engelska.
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 84:8, s. 085130-
- Relaterad länk:
-
https://urn.kb.se/re...
-
visa fler...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- We unraveled the pressure-induced topological insulating behavior in Ge(2)Sb(2)Te(5) (GST) by means of ab initio calculations. We have shown that the spin-orbit interaction separates the twofold degenerate Ge p(x)p(y) Sb p(x)p(y) Te p(x)p(y) state to an upper and a lower level and enhances the energy level of Ge s Sb s Te p(z)/Ge p(z) Sb p(z) Te s states. Consequently, the sign of parity changes by inversing the characterizations of conduction band minimum and valence band maximum in a certain range of pressures. Moreover, the surface band structure with the Dirac cone feature was observed. The present results suggest that GST-relatedmaterials are a new family of pressure-induced topological insulators.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas