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Transport behavior of holes in boron delta-doped diamond structures
- Balmer, Richard S. (author)
- Friel, Ian (author)
- Hepplestone, Steven (author)
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- Uren, Michael J. (author)
- Markham, Matthew L. (author)
- Palmer, Nicola L. (author)
- Pilkington, James (author)
- Huggett, Paul (author)
- Lang, Richard (author)
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- (creator_code:org_t)
- AIP Publishing, 2013
- 2013
- English.
- In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 113:3, s. 033702-
- Journal article (peer-reviewed)
Abstract
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- Boron delta-doped diamond structures have been synthesized using microwave plasma chemical vapor deposition and fabricated into FET and gated Hall bar devices for assessment of the electrical characteristics. A detailed study of variable temperature Hall, conductivity, and field-effect mobility measurements was completed. This was supported by Schrodinger-Poisson and relaxation time calculations based upon application of Fermi's golden rule. A two carrier-type model was developed with an activation energy of similar to 0.2 eV between the delta layer lowest subband with mobility similar to 1 cm(2)/Vs and the bulk valence band with high mobility. This new understanding of the transport of holes in such boron delta-doped structures has shown that although Hall mobility as high as 900 cm(2)/Vs was measured at room temperature, this dramatically overstates the actual useful performance of the device.
Keyword
- Teknisk fysik med inriktning mot elektricitetslära
- Engineering Science with specialization in Science of Electricity
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- ref (subject category)
- art (subject category)
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