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Ultra-shallow junct...
Ultra-shallow junctions formed using microwave annealing
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Xu, Peng (author)
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Fu, Chaochao (author)
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Hu, Cheng (author)
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Zhang, David Wei (author)
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Wu, Dongping (author)
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Luo, Jun (author)
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Zhao, Chao (author)
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- Zhang, Zhi-Bin (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Zhang, Shi-Li (author)
- Uppsala universitet,Fasta tillståndets elektronik
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(creator_code:org_t)
- AIP Publishing, 2013
- 2013
- English.
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 102:12, s. 122114-
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Microwave annealing is shown to be viable for achieving low thermal budget formation of ultra-shallow junctions. Regrowth of a 10 nm thick amorphous Si layer that is generated during a Ge amorphization process prior to BF2 or As dopant implantation proceeds at rates up to 0.53 nm/min for BF2 and up to 0.33 nm/min for As at 370 degrees C. The fraction of electrical activation for implanted dopants is as high as 13% for BF2 and 32% for As with negligible diffusion at 540 degrees C.
Keyword
- Engineering Science with specialization in Electronics
- Teknisk fysik med inriktning mot elektronik
Publication and Content Type
- ref (subject category)
- art (subject category)
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