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Identifying the Electronic Character and Role of the Mn States in the Valence Band of (Ga,Mn)As

Fujii, J. (author)
Salles, B. R. (author)
Sperl, M. (author)
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Ueda, S. (author)
Kobata, M. (author)
Kobayashi, K. (author)
Yamashita, Y. (author)
Torelli, P. (author)
Utz, M. (author)
Fadley, C. S. (author)
Gray, A. X. (author)
Braun, J. (author)
Ebert, H. (author)
Di Marco, Igor (author)
Uppsala universitet,Materialteori
Eriksson, Olle (author)
Uppsala universitet,Materialteori
Thunstroem, P. (author)
Fecher, G. H. (author)
Stryhanyuk, H. (author)
Ikenaga, E. (author)
Minar, J. (author)
Back, C. H. (author)
van der Laan, G. (author)
Panaccione, G. (author)
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 (creator_code:org_t)
2013
2013
English.
In: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 111:9, s. 097201-
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, for both low (1%) and high (13%) Mn doping values, the electronic character of the states near the top of the valence band. Magnetization and temperature-dependent core-level photoemission spectra reveal how the delocalized character of the Mn states enables the bulk ferromagnetic properties of (Ga,Mn)As.

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