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- Chen, S.Fudan Univeristy (author)
Novel Zn-Doped Al2O3 Charge Storage Medium for Light-Erasable In-Ga-Zn-O TFT Memory
- Article/chapterEnglish2013
Publisher, publication year, extent ...
- 2013
- printrdacarrier
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- LIBRIS-ID:oai:DiVA.org:uu-208251
- https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-208251URI
- https://doi.org/10.1109/LED.2013.2266371DOI
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- Language:English
- Summary in:English
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Notes
- A novel Zn-doped Al2O3 (ZAO) layer prepared by atomic layer deposition (ALD) is used as the charge storage medium in an In-Ga-Zn-O thin-film-transistor memory. The gate insulating stack of Al2O3/ZAO/Al2O3 is assembled in a single ALD step, and is found to possess a high electron storage capacity due to very deep defect levels. The memory device shows a threshold voltage shift as large as 6.38 V after a +15V/1 ms programming pulse, and quite good charge retention. Once programmed, the memory can be only light erased. The underlying mechanisms are discussed with the assistance of density functional theory calculations.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik Annan elektroteknik och elektronik hsv//swe
- ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering Other Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
- Engineering Science with specialization in Electronics
- Teknisk fysik med inriktning mot elektronik
Added entries (persons, corporate bodies, meetings, titles ...)
- Cui, X-MFudan University (author)
- Ding, S-JFudan University (author)
- Sun, Q-QFudan University (author)
- Nyberg, TomasUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)tny24390 (author)
- Zhang, Shi-LiUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)shizh725 (author)
- Zhang, WFudan University (author)
- Fudan UniveristyFudan University (creator_code:org_t)
Related titles
- In:IEEE Electron Device Letters34:8, s. 1008-10100741-31061558-0563
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