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Unique UV-Erasable ...
Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals
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Cui, Xing-Mei (author)
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Chen, Sun (author)
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Ding, Shi-Jin (author)
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Sun, Qing-Qing (author)
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- Nyberg, Tomas (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Zhang, Shi-Li (author)
- Uppsala universitet,Fasta tillståndets elektronik
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Zhang, Wei (author)
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(creator_code:org_t)
- 2013
- 2013
- English.
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In: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 34:8, s. 1011-1013
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Semiconducting amorphous indium-gallium-zinc oxide (a-IGZO) films are integrated with an Al2O3/Pt-nanocrystals/ Al2O3 gate-stack to form UV-erasable thin-film transistor (TFT) memory. The threshold voltage (V-th), sub-threshold swing, I-ON/I-OFF ratio, and effective electron mobility of the fabricated devices are 2.1 V, 0.39 V/decade, similar to 10(6), and 8.4 cm(2)/V.s, respectively. A positive V-th shift of 2.25 V is achieved after 1-ms programming at 10 V-th, whereas a negative V-th shift as large as 3.48 V is attained after 5-s UV erasing. In addition, a 10-year memory window of 2.56 V is extrapolated at room temperature. This high-performance a-IGZO TFT memory is suitable for optical touch-panel applications.
Keyword
- In-Ga-Zn-O
- nonvolatile memory
- Pt nanocrystals (NCs)
- thin-film transistor (TFT)
- ultraviolet (UV)
- Engineering Science with specialization in Electronics
- Teknisk fysik med inriktning mot elektronik
Publication and Content Type
- ref (subject category)
- art (subject category)
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