Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals

Cui, Xing-Mei (author)

Chen, Sun (author)

Ding, Shi-Jin (author)

Sun, Qing-Qing (author)

Zhang, Wei (author)

(creator_code:org_t)

2013
2013
English.
In: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 34:8, s. 1011-1013

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

Semiconducting amorphous indium-gallium-zinc oxide (a-IGZO) films are integrated with an Al2O3/Pt-nanocrystals/ Al2O3 gate-stack to form UV-erasable thin-film transistor (TFT) memory. The threshold voltage (V-th), sub-threshold swing, I-ON/I-OFF ratio, and effective electron mobility of the fabricated devices are 2.1 V, 0.39 V/decade, similar to 10(6), and 8.4 cm(2)/V.s, respectively. A positive V-th shift of 2.25 V is achieved after 1-ms programming at 10 V-th, whereas a negative V-th shift as large as 3.48 V is attained after 5-s UV erasing. In addition, a 10-year memory window of 2.56 V is extrapolated at room temperature. This high-performance a-IGZO TFT memory is suitable for optical touch-panel applications.

By the author/editor: Cui, Xing-Mei; Chen, Sun; Ding, Shi-Jin; Sun, Qing-Qing; Nyberg, Tomas; Zhang, Shi-Li; show more...; Zhang, Wei; show less...

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