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High performance tr...
High performance transmit/receive modules in 0.13 um SiGe:C BiCMOS for short range F-band MIMO radars
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Valenta, V (author)
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Spreng, T (author)
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Kaynak, M (author)
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- Dancila, Dragos (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Rydberg, Anders (author)
- Uppsala universitet,Fasta tillståndets elektronik
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Yuan, S (author)
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Trasser, A (author)
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Schumacher, H (author)
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(creator_code:org_t)
- 2014
- 2014
- English.
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In: 2014 IEEE MTT-S International Microwave Symposium (IMS). - 9781479938698
- Related links:
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https://urn.kb.se/re...
Abstract
Subject headings
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- Transmit and Receive (TX/RX) F-band radar modules are presented. Both modules are implemented in a state of the art SiGe:C BiCMOS featuring high-speed HBTs with f(T)/f(max) of 300/500 GHz. The TX is based on a frequency octupler that consists of a cascade of three Gilbert cells, covering the upper F-band from 120-140 GHz and providing differential output power of up to 6 dBm, the highest values reported to date for BiCMOS. The RX uses the identical frequency octupler followed by a mixer, transformer and a differential LNA, giving altogether conversion gain of 25 dB. Both chips are packaged and connected to off-chip patch antennas using bondwire interconnects with dedicated compensation structures. Initial measurement trials proved full functionality of the realized frontend across 114-152 GHz. It has also been demonstrated that wire-bonding, when properly designed, is still an attractive solution for chip to antenna interconnects even above 110 GHz.
Keyword
- Engineering Science with specialization in Electronics
- Teknisk fysik med inriktning mot elektronik
Publication and Content Type
- ref (subject category)
- kon (subject category)
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