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Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering with Silicides as Diffusion Sources
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- Zhen, Zhang, 1979- (author)
- Uppsala universitet,Fasta tillståndets elektronik
- Pagette, F. (author)
- D'emic, C. (author)
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- Yang, B. (author)
- Lavoie, C. (author)
- Ray, A. (author)
- Zhu, Y. (author)
- Hopstaken, M. (author)
- Maurer, S. (author)
- Murray, C. (author)
- Guillorn, M. (author)
- Klaus, D. (author)
- Bucchignano, J. (author)
- Bruley, J. (author)
- Ott, J. (author)
- Pyzyna, A. (author)
- Newbury, J. (author)
- Song, W. (author)
- Zuo, G. (author)
- Lee, K. (author)
- Ozcan, A. (author)
- Silverman, J. (author)
- Ouyang, C. (author)
- Park, D. (author)
- Solomon, P. (author)
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- (creator_code:org_t)
- 2010
- 2010
- English.
- In: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 31, s. 731-733
- Journal article (peer-reviewed)
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- Pagette, F.
- D'emic, C.
- Yang, B.
- Lavoie, C.
- Ray, A.
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- Zhu, Y.
- Hopstaken, M.
- Maurer, S.
- Murray, C.
- Guillorn, M.
- Klaus, D.
- Bucchignano, J.
- Bruley, J.
- Ott, J.
- Pyzyna, A.
- Newbury, J.
- Song, W.
- Zuo, G.
- Lee, K.
- Ozcan, A.
- Silverman, J.
- Ouyang, C.
- Park, D.
- Solomon, P.
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