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Impact of Al-, Ni-, TiN-, and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-K dielectrics
- Abermann, S (author)
- Efavi, J (author)
-
- Sjöblom, Gustaf (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Lemm, M (author)
- Bertagnolli, E (author)
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- (creator_code:org_t)
- 2006
- 2006
- English.
- Conference paper (peer-reviewed)
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- kon (subject category)
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- Abermann, S
- Efavi, J
- Sjöblom, Gustaf
- Lemm, M
- Olsson, Jörgen
- Bertagnolli, E
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- Uppsala University
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