A New Latch-Free LIGBT on SOI

• A new latch-free LIGBT on SOI is presented. The new device combines advantages from both LDMOS as well as LIGBT technologies; high breakdown voltage, high drive current density, low control voltages, at the same time eliminating latchup problems. Breakdown voltage of over 200 V, on-state current density over 3 A/mm and latch-free operation is demonstrated.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Engineering Science with specialization in Electronics

Teknisk fysik med inriktning mot elektronik

Publication and Content Type

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