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Recovery After Pote...
Recovery After Potential-Induced Degradation of CuIn1-xGaxSe2 Solar Cells With CdS and Zn(O,S) Buffer Layers
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- Fjällström, Viktor (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Szaniawski, Piotr (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Vermang, Bart (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Salome, Pedro M. P. (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Rostvall, Fredrik (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Zimmermann, Uwe (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Edoff, Marika (author)
- Uppsala universitet,Fasta tillståndets elektronik
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(creator_code:org_t)
- 2015
- 2015
- English.
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In: IEEE Journal of Photovoltaics. - 2156-3381 .- 2156-3403. ; 5:2, s. 664-669
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- This study deals with potential-induced degradation (PID) of Cu(In,Ga)Se-2-based solar cells and different approaches to subsequent recovery of efficiency. Three different recovery methods were studied: 1) etch recovery, 2) accelerated recovery, and 3) unaccelerated recovery. After being completely degraded, the solar cells with CdS buffer layers recovered their efficiencies at different rates, depending on the method which was used. On the other hand, if Zn(O,S) was used as a buffer layer instead of CdS, the recovery rate was close to zero. The buffer layer type clearly influenced the sodium distribution during PID stressing and recovery, as well as the possibilities for recovery of the electrical performance.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Buffer layer
- Cu(In
- Ga)Se-2 (CIGS)
- potential-induced degradation (PID)
- thin-film solar cells
Publication and Content Type
- ref (subject category)
- art (subject category)
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