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Oxygen content and depth profiling in silicon surface technology studied by the 16 0(aa)160 resonance at 3.015 MeV

Possnert, Göran (author)
Fahlander, C (author)
Orre, B (author)
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Norde, Herman (author)
Petersson, CS (author)
Tove, PA (author)
Uppsala universitet,Fasta tillståndets elektronik
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 (creator_code:org_t)
1978
1978
English.
In: Physica Scripta. - 0031-8949 .- 1402-4896. ; 18, s. 410-
  • Journal article (peer-reviewed)
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