Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

• An architectural performance comparison of bandgap voltage reference variants, designed in a 0.18 mu m CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space applications. The paper includes an analysis on how pulse quenching occurs within the indispensable current mirror, which is used in every analog circuit.

Subject headings

NATURVETENSKAP  -- Fysik -- Subatomär fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Subatomic Physics (hsv//eng)

Keyword

Analog single-event transient (ASET)

bandgap voltage reference (BGR)

charge sharing

CMOS analog integrated circuits

heavy ion

ionization

parasitic bipolar effect

pulse quenching

radiation effects

radiation hardening by design (RHBD)

reference circuits

single-event effects (SEE)

single-event transient (SET)

space electronics

voltage reference

Publication and Content Type

ref (subject category)

art (subject category)