Search: onr:"swepub:oai:DiVA.org:uu-342652" >
Interface between A...
Interface between Al2O3 and 4H-SiC investigated by time-of-flight medium energy ion scattering
-
- Linnarsson, Margareta K. (author)
- KTH,Materialfysik, MF
-
- Hallén, Anders (author)
- KTH,Integrerade komponenter och kretsar
-
- Khartsev, Sergiy (author)
- KTH,Integrerade komponenter och kretsar
-
show more...
-
- Suvanam, Sethu Saveda (author)
- KTH,Uppsala universitet,Fasta tillståndets elektronik,KTH Royal Inst Technol, Sch Informat & Commun Technol, Electrum 229, SE-16440 Kista, Sweden,Skolan för informations- och kommunikationsteknik (ICT)
-
- Usman, Muhammad, 1980- (author)
- KTH,Integrerade komponenter och kretsar
-
show less...
-
(creator_code:org_t)
- 2017-11-17
- 2017
- English.
-
In: Journal of Physics D. - : IOP PUBLISHING LTD. - 0022-3727 .- 1361-6463. ; 50:49
- Related links:
-
https://urn.kb.se/re...
-
show more...
-
https://doi.org/10.1...
-
https://urn.kb.se/re...
-
show less...
Abstract
Subject headings
Close
- The formation of interfacial oxides during heat treatment of dielectric films on 4H-SiC has been studied. The 4H-SiC surface has been carefully prepared to create a clean and abrupt interface to Al2O3. An amorphous, 3 nm thick, Al2O3 film has been prepared on 4H-SiC by atomic layer deposition and rapid thermal annealing was then performed in N2O ambient at 700 degrees C and 1100 degrees C during 1 min. The samples were studied by time-of-flight medium energy ion scattering (ToF-MEIS), with sub-nanometer depth resolution and it is seen that, at both annealing temperatures, a thin SiOx (1 <= x <= 2) is formed at the interface. Our results further indicate that carbon remains in the silicon oxide in samples annealed at 700 degrees C. Additional electrical capacitance voltage measurements indicate that a large concentration of interface traps is formed at this temperature. After 1100 degrees C annealing, both MEIS and XRD measurements show that these features disappear, in accordance with electrical data.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
- NATURVETENSKAP -- Fysik -- Annan fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Other Physics Topics (hsv//eng)
Keyword
- ALD
- ToF-MEIS
- 4H-SiC
- Al2O3
- interface
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database