SwePub
Sök i LIBRIS databas

  Extended search

onr:"swepub:oai:DiVA.org:uu-358259"
 

Search: onr:"swepub:oai:DiVA.org:uu-358259" > Atomic layer deposi...

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist

Atomic layer deposition of Zn(O,S) buffer layers for Cu(In,Ga)Se2 solar cells with KF post-deposition treatment

Larsson, Fredrik (author)
Uppsala universitet,Fasta tillståndets elektronik
Donzel-Gargand, Olivier (author)
Uppsala universitet,Fasta tillståndets elektronik
Keller, Jan (author)
Uppsala universitet,Fasta tillståndets elektronik
show more...
Edoff, Marika, 1965- (author)
Uppsala universitet,Fasta tillståndets elektronik
Törndahl, Tobias, 1974- (author)
Uppsala universitet,Fasta tillståndets elektronik
show less...
 (creator_code:org_t)
Elsevier, 2018
2018
English.
In: Solar Energy Materials and Solar Cells. - : Elsevier. - 0927-0248 .- 1879-3398. ; 183, s. 8-15
  • Journal article (peer-reviewed)
Abstract Subject headings
Close  
  • We investigate the possibility to combine Zn(O,S) buffer layers grown by atomic layer deposition (ALD) with KF post-deposition treated Cu(In,Ga)Se-2 (CIGS-KF) in solar cells. It is shown that the beneficial effect on open-circuit voltage from the post-deposition treatment is essentially independent of buffer layer material. However, a wet chemical surface treatment is required prior to ALD in order to achieve competitive fill factor values. A water rinse is sufficient to create an absorber surface similar to the one formed during a conventional CdS chemical bath deposition process. However, it is observed that CIGS-KF/Zn(O,S) devices made with water-rinsed absorbers systematically result in lower fill factor values than for the corresponding CIGS-KF/CdS references. This effect can be mitigated by decreasing the H2S:H2O precursor ratio during ALD initiation, indicating that the fill factor limitation is linked to the initial Zn(O,S) growth on the modified CIGS-KF surface. The best CIGS-KF/Zn (O,S) devices were fabricated by etching away the KF-modified surface layer prior to ALD, followed by a low temperature anneal. The thermal treatment step is needed to increase the open-circuit voltage close to the value of the CdS devices. The results presented in this contribution indicate that the main beneficial effects from KFPDT in our devices are neither associated with the CdS CBD process nor due to the formation of a K-In-Serich phase on the CIGS surface.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
NATURVETENSKAP  -- Kemi -- Materialkemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences -- Materials Chemistry (hsv//eng)

Keyword

CIGS
KF-PDT
Zinc oxysulfide
Buffer layers
Interfaces

Publication and Content Type

ref (subject category)
art (subject category)

Find in a library

To the university's database

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist

Search outside SwePub

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view