Ferroelectric properties of doped BaTiO3 thin film by pulsed laser deposition

• BaTiO3 thin films co-doped at the Ti site with Mn and Nb were grown on 0.5% Nb-doped (001) oriented SrTiO3 substrates by pulsed laser deposition. The films show single-phase tetragonal structure, growing epitaxially with a smooth interface to the substrate. Using piezoforce microscopy, we find that both doped and undoped films exhibit good ferroelectric response. The piezoelectric domain switching in the films was confirmed by measuring local hysteresis of the polarization at several different areas across the thin films, demonstrating a switchable ferroelectric state for these films. The doping of the BaTiO3 also reduces the bandgap of the material from 3.18 eV for BaTiO3 to nearly 2.7 eV for the 7.5% doped sample, potentially making the films effective light-harvesters in the visible spectrum. The results demonstrate co-doping as an effective strategy for bandgap engineering and a guide for the realization of visible-light applications of related thin film systems.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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