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Stress domains in Si(111)/a-Si3N4 nanopixel: Ten-million-atom molecular dynamics simulations on parallel computers
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- Omeltchenko, A (author)
- Uppsala universitet,Neutronforskningslaboratoriet i Studsvik
- Bachlechner, ME (author)
- Nakano, A (author)
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- Kalia, RK (author)
- Vashishta, P (author)
- Ebbsjo, I (author)
- Madhukar, A (author)
- Messina, P (author)
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- (creator_code:org_t)
- AMERICAN PHYSICAL SOC, 2000
- 2000
- English.
- In: PHYSICAL REVIEW LETTERS. - : AMERICAN PHYSICAL SOC. - 0031-9007. ; 84:2, s. 318-321
- Journal article (peer-reviewed)
Abstract
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- Parallel molecular dynamics simulations are performed to determine atomic-level stresses in Si(111)/Si3N4(0001) and Si(111)/a-Si3N4 nanopixels. Compared to the crystalline case, the stresses in amorphous Si3N4 are highly inhomogeneous in the plane of the
Keyword
- SILICON-NITRIDE; ELECTRONIC-STRUCTURE; BETA-SI3N4; MORPHOLOGY; INTERFACE; BETA-C3N4; STRAIN; FILMS
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- ref (subject category)
- art (subject category)
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- Bachlechner, ME
- Nakano, A
- Kalia, RK
- Vashishta, P
- Ebbsjo, I
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- Madhukar, A
- Messina, P
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