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Stress domains in S...
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Omeltchenko, AUppsala universitet,Neutronforskningslaboratoriet i Studsvik
(author)
Stress domains in Si(111)/a-Si3N4 nanopixel: Ten-million-atom molecular dynamics simulations on parallel computers
- Article/chapterEnglish2000
Publisher, publication year, extent ...
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AMERICAN PHYSICAL SOC,2000
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:uu-36713
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https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-36713URI
Supplementary language notes
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Language:English
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Summary in:English
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Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Addresses: Omeltchenko A, Louisiana State Univ, Dept Phys & Astron, Concurrent Comp Lab Mat Simulat, Baton Rouge, LA 70803 USA. Louisiana State Univ, Dept Phys & Astron, Concurrent Comp Lab Mat Simulat, Baton Rouge, LA 70803 USA. Louisiana State Univ, Dep
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Parallel molecular dynamics simulations are performed to determine atomic-level stresses in Si(111)/Si3N4(0001) and Si(111)/a-Si3N4 nanopixels. Compared to the crystalline case, the stresses in amorphous Si3N4 are highly inhomogeneous in the plane of the
Subject headings and genre
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SILICON-NITRIDE; ELECTRONIC-STRUCTURE; BETA-SI3N4; MORPHOLOGY; INTERFACE; BETA-C3N4; STRAIN; FILMS
Added entries (persons, corporate bodies, meetings, titles ...)
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Bachlechner, ME
(author)
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Nakano, A
(author)
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Kalia, RK
(author)
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Vashishta, P
(author)
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Ebbsjo, I
(author)
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Madhukar, A
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Messina, P
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Uppsala universitetNeutronforskningslaboratoriet i Studsvik
(creator_code:org_t)
Related titles
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In:PHYSICAL REVIEW LETTERS: AMERICAN PHYSICAL SOC84:2, s. 318-3210031-9007
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