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- Omeltchenko, AUppsala universitet,Neutronforskningslaboratoriet i Studsvik (author)
Stress domains in Si(111)/a-Si3N4 nanopixel: Ten-million-atom molecular dynamics simulations on parallel computers
- Article/chapterEnglish2000
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- AMERICAN PHYSICAL SOC,2000
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- LIBRIS-ID:oai:DiVA.org:uu-36713
- https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-36713URI
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- Language:English
- Summary in:English
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- Addresses: Omeltchenko A, Louisiana State Univ, Dept Phys & Astron, Concurrent Comp Lab Mat Simulat, Baton Rouge, LA 70803 USA. Louisiana State Univ, Dept Phys & Astron, Concurrent Comp Lab Mat Simulat, Baton Rouge, LA 70803 USA. Louisiana State Univ, Dep
- Parallel molecular dynamics simulations are performed to determine atomic-level stresses in Si(111)/Si3N4(0001) and Si(111)/a-Si3N4 nanopixels. Compared to the crystalline case, the stresses in amorphous Si3N4 are highly inhomogeneous in the plane of the
Subject headings and genre
- SILICON-NITRIDE; ELECTRONIC-STRUCTURE; BETA-SI3N4; MORPHOLOGY; INTERFACE; BETA-C3N4; STRAIN; FILMS
Added entries (persons, corporate bodies, meetings, titles ...)
- Bachlechner, ME (author)
- Nakano, A (author)
- Kalia, RK (author)
- Vashishta, P (author)
- Ebbsjo, I (author)
- Madhukar, A (author)
- Messina, P (author)
- Uppsala universitetNeutronforskningslaboratoriet i Studsvik (creator_code:org_t)
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- In:PHYSICAL REVIEW LETTERS: AMERICAN PHYSICAL SOC84:2, s. 318-3210031-9007
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