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Theoretical investigation of the thickness dependence of soft-x-ray emission from thin AlAs(100) layers buried in GaAs

Mankefors, S (author)
Uppsala universitet,Fysiska institutionen
Nilsson, PO (author)
Kanski, J (author)
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Andersson, T (author)
Karlsson, K (author)
Agui, A (author)
Sathe, C (author)
Guo, JH (author)
Nordgren, J (author)
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 (creator_code:org_t)
AMERICAN PHYSICAL SOC, 2000
2000
English.
In: PHYSICAL REVIEW B. - : AMERICAN PHYSICAL SOC. - 1098-0121. ; 61:8, s. 5540-5545
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Ultrathin AlAs(100) layers of 1-, 2-, and 5-ML thickness buried in GaAs are investigated by nb initio calculations. Unique experimental soft-x-ray emission spectra are explained in terms of interface effects and changes with layer thickness are found in t

Keyword

NORM-CONSERVING PSEUDOPOTENTIALS; BAND OFFSETS; GAAS/ALAS SUPERLATTICES; ELECTRONIC-STRUCTURE; GROUND-STATE; MODEL; HETEROJUNCTIONS; SURFACES; DENSITY

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art (subject category)

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