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III-V semiconductor material for tunable Fabry-Perot filters for coarse and dense WDM systems
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- Strassner, M (author)
- Uppsala universitet,Institutionen för materialvetenskap,MATERIALS SCIENCE/MST
- Daleiden, J (author)
- Chitica, N (author)
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- Keiper, D (author)
- Stalnacke, B (author)
- Greek, S (author)
- Hjort, K (author)
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- (creator_code:org_t)
- ELSEVIER SCIENCE SA, 2000
- 2000
- English.
- In: SENSORS AND ACTUATORS A-PHYSICAL. - : ELSEVIER SCIENCE SA. - 0924-4247. ; 85:1-3, s. 249-255
- Journal article (peer-reviewed)
Abstract
Subject headings
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- In the following payer, we report on the investigation of the mechanical properties of InP grown on InGaAs by organic metal vapor phase epitaxy (OMVPE). When InP is grown, it is stressed due to an unintentional arsenic doping profile. This stress gradient
Keyword
- Inp; MOEMS; tunable Fabry-Perot filter; air gap cavity
Publication and Content Type
- ref (subject category)
- art (subject category)
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- Daleiden, J
- Chitica, N
- Keiper, D
- Stalnacke, B
- Greek, S
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- Hjort, K
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