onr:"swepub:oai:DiVA.org:uu-37463"
Search: onr:"swepub:oai:DiVA.org:uu-37463" > Electrical properti...
- 1 of 1
- Previous record
- Next record
- To hitlist
Electrical properties of the TiSi2-Si transition region in contacts: The influence of an interposed layer of Nb
-
- Aberg, J (author)
- Uppsala universitet,Institutionen för materialvetenskap,MATERIALS SCIENCE/MST
- Persson, S (author)
- Hellberg, PE (author)
- show more...
- Zhang, SL (author)
- Smith, U (author)
- Ericson, F (author)
- Engstrom, M (author)
- Kaplan, W (author)
- show less...
- (creator_code:org_t)
- AMER INST PHYSICS, 2001
- 2001
- English.
- In: JOURNAL OF APPLIED PHYSICS. - : AMER INST PHYSICS. - 0021-8979. ; 90:5, s. 2380-2388
- Journal article (peer-reviewed)
Abstract
Subject headings
Close
- The influence of an interposed ultrathin Nb layer between Ti and Si on the silicide formation and the electrical contact between the silicide formed and the Si substrate is investigated. The presence of the Nb interlayer results in the formation of ternar
Keyword
- C54 PHASE; ENHANCED FORMATION; SILICON; TRANSFORMATION; TEMPERATURE; RESISTIVITY; FILMS; ACTIVATION; MOLYBDENUM; RESISTANCE
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
- JOURNAL OF APPLIED PHYSICS (Search for host publication in LIBRIS)
To the university's database
- 1 of 1
- Previous record
- Next record
- To hitlist
Find more in SwePub
- By the author/editor
- Aberg, J
- Persson, S
- Hellberg, PE
- Zhang, SL
- Smith, U
- Ericson, F
- show more...
- Engstrom, M
- Kaplan, W
- show less...
- Articles in the publication
- JOURNAL OF APPLI ...
- By the university
- Uppsala University
Search outside SwePub
- Extend your search to:
- Google Book Search
- Google Scholar
Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.
- Copyright © LIBRIS - National Library Systems
- LIBRIS.kb.se
