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Device noise reduction for Silicon nanowire field-effect-transistor based sensors by using a Schottky junction gate

Chen, Xi (author)
Uppsala universitet,Fasta tillståndets elektronik
Chen, Si, 1982- (author)
Uppsala universitet,Fasta tillståndets elektronik
Hu, Qitao (author)
Uppsala universitet,Fasta tillståndets elektronik
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Zhang, Shi-Li (author)
Uppsala universitet,Fasta tillståndets elektronik
Solomon, Paul (author)
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
Zhang, Zhen, 1979- (author)
Uppsala universitet,Fasta tillståndets elektronik
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 (creator_code:org_t)
2019-01-11
2019
English.
In: ACS Sensors. - : American Chemical Society (ACS). - 2379-3694. ; 4:2, s. 427-433
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • The sensitivity of metal-oxide-semiconductor field-effect transistor (MOSFET) based nanoscale sensors is ultimately limited by noise induced by carrier trapping/detrapping processes at the gate oxide/semiconductor interfaces. We have designed a Schottky junction gated silicon nanowire field-effect transistor (SiNW-SJGFET) sensor, where the Schottky junction replaces the noisy oxide/semiconductor interface. Our sensor exhibits significantly reduced noise, 2.1×10-9 V2µm2/Hz at 1 Hz, compared to reference devices with the oxide/semiconductor interface operated at both inversion and depletion modes. Further improvement can be anticipated by wrapping the nanowire by such a Schottky junction thereby eliminating all oxide/semiconductor interfaces. Hence, a combination of the low-noise SiNW-SJGFET sensor device with a sensing surface of the Nernstian response limit holds promises for future high signal-to-noise ratio sensor applications.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Signalbehandling (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Signal Processing (hsv//eng)

Keyword

Noise reduction
schottky junction gate
silicon nanowire
field-effect transistor
low frequency noise
ion sensor

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ref (subject category)
art (subject category)

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By the author/editor
Chen, Xi
Chen, Si, 1982-
Hu, Qitao
Zhang, Shi-Li
Solomon, Paul
Zhang, Zhen, 197 ...
About the subject
ENGINEERING AND TECHNOLOGY
ENGINEERING AND ...
and Nano technology
ENGINEERING AND TECHNOLOGY
ENGINEERING AND ...
and Electrical Engin ...
and Signal Processin ...
Articles in the publication
ACS Sensors
By the university
Uppsala University

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