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Device noise reduct...
Device noise reduction for Silicon nanowire field-effect-transistor based sensors by using a Schottky junction gate
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- Chen, Xi (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Chen, Si, 1982- (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Hu, Qitao (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Zhang, Shi-Li (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Solomon, Paul (author)
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
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- Zhang, Zhen, 1979- (author)
- Uppsala universitet,Fasta tillståndets elektronik
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(creator_code:org_t)
- 2019-01-11
- 2019
- English.
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In: ACS Sensors. - : American Chemical Society (ACS). - 2379-3694. ; 4:2, s. 427-433
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The sensitivity of metal-oxide-semiconductor field-effect transistor (MOSFET) based nanoscale sensors is ultimately limited by noise induced by carrier trapping/detrapping processes at the gate oxide/semiconductor interfaces. We have designed a Schottky junction gated silicon nanowire field-effect transistor (SiNW-SJGFET) sensor, where the Schottky junction replaces the noisy oxide/semiconductor interface. Our sensor exhibits significantly reduced noise, 2.1×10-9 V2µm2/Hz at 1 Hz, compared to reference devices with the oxide/semiconductor interface operated at both inversion and depletion modes. Further improvement can be anticipated by wrapping the nanowire by such a Schottky junction thereby eliminating all oxide/semiconductor interfaces. Hence, a combination of the low-noise SiNW-SJGFET sensor device with a sensing surface of the Nernstian response limit holds promises for future high signal-to-noise ratio sensor applications.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Signalbehandling (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Signal Processing (hsv//eng)
Keyword
- Noise reduction
- schottky junction gate
- silicon nanowire
- field-effect transistor
- low frequency noise
- ion sensor
Publication and Content Type
- ref (subject category)
- art (subject category)
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