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Strain impacts on commensurate bilayer graphene superlattices : Distorted trigonal warping, emergence of bandgap and direct-indirect bandgap transition

Khatibi, Zahra (author)
Iran Univ Sci & Technol, Dept Phys, Tehran 1684613114, Iran
Namiranian, Afshin (author)
Iran Univ Sci & Technol, Dept Phys, Tehran 1684613114, Iran
Parhizgar, Fariborz (author)
Uppsala universitet,Materialteori,Inst Res Fundamental Sci IPM, Sch Phys, Tehran 193955531, Iran
 (creator_code:org_t)
ELSEVIER SCIENCE SA, 2019
2019
English.
In: Diamond and related materials. - : ELSEVIER SCIENCE SA. - 0925-9635 .- 1879-0062. ; 92, s. 228-234
  • Journal article (peer-reviewed)
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  • Due to low dimensionality, the controlled stacking of graphene films and their electronic properties are susceptible to environmental changes including strain. The strain-induced modification of the electronic properties such as the emergence and modulation of bandgaps crucially depends on the stacking of the graphene films, However, to date, only the impact of strain on electronic properties of Bernal and AA-stacked bilayer graphene has been extensively investigated in theoretical studies. Exploiting density functional theory and tight-binding calculation, we investigate the impacts of in-plane strain on two different classes of commensurate twisted bilayer graphene (TBG) which are even/odd under sublattice exchange (SE) parity. We find that the SE odd TBG remains gapless whereas the bandgap increases for the SE even TBG when applying equibiaxial tensile strain. Moreover, we observe that for extremely large mixed strains both investigated TBG superstructures demonstrate direct-indirect bandgap transition.

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NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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