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Low-Noise Schottky ...
Low-Noise Schottky Junction Trigate Silicon Nanowire Field-effect Transistor for Charge Sensing
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- Chen, Xi (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Chen, Si, 1982- (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Zhang, Shi-Li (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Solomon, Paul (author)
- Uppsala universitet,Fasta tillståndets elektronik,IBM Thomas J. Watson Research Center
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- Zhang, Zhen, 1979- (author)
- Uppsala universitet,Fasta tillståndets elektronik
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(creator_code:org_t)
- 2019
- 2019
- English.
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In: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 66:9, s. 3994-4000
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Silicon nanowire (SiNW) field-effect transistors (SiNWFETs) are of great potential as a high-sensitivity charge sensor. The signal-to-noise ratio (SNR) of an SiNWFET sensor is ultimately limited by the intrinsic device noise generated by carrier trapping/detrapping processes at the gate oxide/silicon interface. This carrier trapping/detrapping-induced noise can be significantly reduced by replacing the noisy oxide/silicon interface with a Schottky junction gate (SJG) on the top of the SiNW. In this paper, we present a tri-SJG SiNWFET (Tri-SJGFET) with the SJG formed on both the top surface and the two sidewalls of the SiNW so as to enhance the gate control over the SiNW channel. Both experiment and simulation confirm that the additional sidewall gates in a narrow Tri-SJGFET indeed can confine the conduction path within the bulk of the SiNW channel away from the interfaces and significantly improve the immunity to the traps at the bottom buried oxide/silicon interface. Therefore, the optimal low-frequency noise performance can be achieved without the need for any substrate bias. This new gating structure holds promises for further development of robust SiNWFET-based charge sensors with low noise and low operation voltage.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Silicon nanowire field-effect transistor
- Schottky junction
- trigate
- sensor
- low-frequency noise
- charge sensing
- Teknisk fysik med inriktning mot elektronik
- Engineering Science with specialization in Electronics
Publication and Content Type
- ref (subject category)
- art (subject category)
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