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Top-bottom gate cou...
Top-bottom gate coupling effect on low frequency noise in a Schottky junction gated silicon nanowire field-effect transistor
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- Chen, Xi (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Chen, Si, 1982- (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Solomon, Paul (author)
- IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
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- Zhang, Zhen, 1979- (author)
- Uppsala universitet,Fasta tillståndets elektronik
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(creator_code:org_t)
- 2019
- 2019
- English.
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In: IEEE Journal of the Electron Devices Society. - 2168-6734. ; 7, s. 696-700
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Abstract
Subject headings
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- In this letter, strong low frequency noise (LFN) reduction is observed when the buried oxide (BOX)/silicon interface of a Schottky junction gated silicon nanowire field-effect transistor (SJGFET) is depleted by a substrate bias. Such LFN reduction is mainly attributed to the dramatic reduction in Coulomb scattering when carriers are pushed away from the interface. The BOX/silicon interface depletion can also be achieved by sidewall Schottky junction gates in a narrow channel SJGFET, leading to an optimal LFN performance without the need of any substrate bias.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Teknisk fysik med inriktning mot elektronik
- Engineering Science with specialization in Electronics
Publication and Content Type
- ref (subject category)
- art (subject category)
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