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The influence of pr...
The influence of pressure and magnetic field on the deposition of epitaxial TiBx thin films from DC magnetron sputtering
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- Nedfors, Nils (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Primetzhofer, Daniel (author)
- Uppsala universitet,Tillämpad kärnfysik,Uppsala Univ, Sweden
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- Zhirkov, Igor (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Palisaitis, Justinas (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Persson, Per O A (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Greene, Joseph E (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten,Univ Illinois, IL 61801 USA; Natl Taiwan Univ Sci and Technol, Taiwan
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- Petrov, Ivan (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten,Univ Illinois, IL 61801 USA
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- Rosén, Johanna (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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(creator_code:org_t)
- Elsevier BV, 2020
- 2020
- English.
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In: Vacuum. - : Elsevier BV. - 0042-207X .- 1879-2715. ; 177
- Related links:
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Subject headings
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- Magnetron sputter deposition of TiBx thin films from a TiB2 target typically results in highly overstoichiometric films due to differences in sputtered-atom ejection angles and gas-phase scattering during transport to the substrate. This study investigates the effects of the magnetron magnetic field strength at the substrate position and the Ar sputtering pressure on the resulting film composition and crystalline quality. It is shown that the B/Ti atomic ratio can be reduced from 2.7 to 2.1 by increasing the Ar pressure from 5 mTorr to 20 mTorr, a trend consistent with previous work. Despite the use of a relatively high Ar pressure, a change to a stronger outer magnetic pole leads to, dense TiB2.1 films of high crystal quality, as shown by X-ray diffraction, scanning transmission electron microscopy, and specific resistivity of 32 mu Omega cm. For epitaxial films deposited at 900 degrees C on Al2O3(001), a TiB2[110]//Al2O3[100] orientational relationship were obtained.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- NATURVETENSKAP -- Kemi -- Oorganisk kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)
Keyword
- Titanium diboride
- Magnetron sputtering
- Epitaxial
- Magnetic field
- Sputtering pressure
Publication and Content Type
- ref (subject category)
- art (subject category)
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