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In-situ nanoscale c...
In-situ nanoscale characterization of composition and structure during formation of ultrathin nickel silicide
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- Tran, Tuan T. (author)
- Uppsala universitet,Tillämpad kärnfysik
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- Lavoie, Christian (author)
- IBM Corp, Thomas J Watson Res Ctr, POB 704, Yorktown Hts, NY 10598 USA.
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- Zhang, Zhen, 1979- (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Primetzhofer, Daniel (author)
- Uppsala universitet,Tillämpad kärnfysik
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(creator_code:org_t)
- Elsevier, 2021
- 2021
- English.
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In: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 536
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Abstract
Subject headings
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- We characterize composition and structure of ultrathin nickel silicide during formation from 3 nm Ni films on Si(1 0 0) using in-situ high-resolution ion scattering and high-resolution transmission electron microscopy. We show the transition to occur in discrete steps, in which an intermediate phase is observed within a narrow range of temperature from 230 °C to 290 °C. The film composition of this intermediate phase is found to be 50% Ni:50% Si, without evidence for long-range structure, indicating the film to be a homogeneous monosilicide NiSi phase. The final phase is resemblant of the cubic disilicide NiSi2, but with slightly off-stoichiometric composition of 38% Ni and 62% Si. Along the [1 0 0] axis, the lattices of the film and the substrate are found in perfect alignment. Due to the epitaxial growth of the silicide, a contraction of the c lattice constant of the film by 0.7–1% is detected.
Subject headings
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Ultrathin
- Nickel silicide
- Epitaxial silicide
- In-situ characterization
- High-resolution ion scattering
Publication and Content Type
- ref (subject category)
- art (subject category)
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