SwePub
Sök i LIBRIS databas

  Extended search

onr:"swepub:oai:DiVA.org:uu-434722"
 

Search: onr:"swepub:oai:DiVA.org:uu-434722" > Unveiling Temperatu...

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist

Unveiling Temperature-Induced Structural Domains and Movement of Oxygen Vacancies in SrTiO3 with Graphene

Chen, Si (author)
Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands.
Chen, Xin, 1992- (author)
Uppsala universitet,Materialteori
Duijnstee, Elisabeth A. (author)
Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands.
show more...
Sanyal, Biplab (author)
Uppsala universitet,Materialteori
Banerjee, Tamalika (author)
Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands.
show less...
Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands Materialteori (creator_code:org_t)
2020-11-11
2020
English.
In: ACS Applied Materials and Interfaces. - : AMER CHEMICAL SOC. - 1944-8244 .- 1944-8252. ; 12:47, s. 52915-52921
  • Journal article (peer-reviewed)
Abstract Subject headings
Close  
  • Heterointerfaces coupling complex oxides exhibit coexisting functional properties such as magnetism, superconductivity, and ferroelectricity, often absent in their individual constituent. SrTiO3 (STO), a canonical band insulator, is an active constituent of such heterointerfaces. Temperature-, strain-, or mechanical stress-induced ferroelastic transition leads to the formation of narrow domains and domain walls in STO. Such ferroelastic domain walls have been studied using imaging or transport techniques and, often, the findings are influenced by the choice and interaction of the electrodes with STO. In this work, we use graphene as a unique platform to unveil the movement of oxygen vacancies and ferroelastic domain walls near the STO surface by studying the temperature and gate bias dependence of charge transport in graphene. By sweeping the back gate voltage, we observe antihysteresis in graphene typically observed in conventional ferroelectric oxides. Interestingly, we find features in antihysteresis that are related to the movement of domain walls and of oxygen vacancies in STO. We ascertain this by analyzing the time dependence of the graphene square resistance at different temperatures and gate bias. Density functional calculations estimate the surface polarization and formation energies of layer-dependent oxygen vacancies in STO. This corroborates quantitatively with the activation energies determined from the temperature dependence of the graphene square resistance. Introduction of a hexagonal boron nitride (hBN) layer, of varying thicknesses, between graphene and STO leads to a gradual disappearance of the observed features, implying the influence of the domain walls onto the potential landscape in graphene.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

SrTiO3
domain walls
antihysteresis
graphene
oxygen vacancies

Publication and Content Type

ref (subject category)
art (subject category)

Find in a library

To the university's database

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist

Search outside SwePub

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view