Hydrogen-driven surface amorphization of the transparent oxide semiconductor thin-films for photovoltaic applications

• Crystalline transparent conductive oxides are promising candidates as front electrodes in electronic devices due to the high electron mobility and good optical transparency in the visible region. However, the rough surface morphology resulting from the grain growth during the deposition and post-annealing process triggers severe drawbacks in their thin-film applications. Here, we demonstrate the hydrogen-driven surface amorphization of the crystalline In?Sn?O (c-ITO) thin film. By introducing hydrogen gas during the deposition process, the surface of the c-ITO thin film is selectively amorphized, allowing for the smooth surface morphology while preserving the advantages of the crystalline thin film. The progressive surface amorphization of c-ITO thin film offers the tunability of the work function, leading to the improved power conversion efficiency of the thin-film solar cell. Our work provides a facile method to realize the smooth surface morphology of the c-ITO thin films, which can be further utilized for a wide range of crystalline thin films for optoelectronic applications.

Subject headings

NATURVETENSKAP  -- Kemi -- Materialkemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences -- Materials Chemistry (hsv//eng)

Keyword

Transparent conductive oxides

Surface morphology

Hydrogen impurity

Work function

Indium tin oxides

Organic photovoltaic

Publication and Content Type

ref (subject category)

art (subject category)