Search: onr:"swepub:oai:DiVA.org:uu-447931" >
Rational Passivatio...
Rational Passivation of Sulfur Vacancy Defects in Two-Dimensional Transition Metal Dichalcogenides
-
- Bretscher, Hope (author)
- Univ Cambridge, Cambridge CB2 1TN, England.
-
- Li, Zhaojun (author)
- Uppsala universitet,Energimaterialens fysik,Univ Cambridge, Cambridge CB2 1TN, England
-
- Xiao, James (author)
- Univ Cambridge, Cambridge CB2 1TN, England.
-
show more...
-
- Qiu, Diana Yuan (author)
- Yale Univ, New Haven, CT 06520 USA.
-
- Refaely-Abramson, Sivan (author)
- Weizmann Inst Sci, IL-76100 Rehovot, Israel.
-
- Alexander-Webber, Jack A. (author)
- Univ Cambridge, Cambridge CB2 1TN, England.
-
- Tanoh, Arelo (author)
- Univ Cambridge, Cambridge CB2 1TN, England.
-
- Fan, Ye (author)
- Univ Cambridge, Cambridge CB2 1TN, England.
-
- Delport, Geraud (author)
- Univ Cambridge, Cambridge CB2 1TN, England.
-
- Williams, Cyan A. (author)
- Univ Cambridge, Cambridge CB2 1TN, England.
-
- Stranks, Samuel D. (author)
- Univ Cambridge, Cambridge CB2 1TN, England.
-
- Hofmann, Stephan (author)
- Univ Cambridge, Cambridge CB2 1TN, England.
-
- Neaton, Jeffrey B. (author)
- Univ Calif Berkeley, Berkeley, CA 94720 USA.;Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA.
-
- Louie, Steven G. (author)
- Univ Calif Berkeley, Berkeley, CA 94720 USA.;Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA.
-
- Rao, Akshay (author)
- Univ Cambridge, Cambridge CB2 1TN, England.
-
show less...
-
Univ Cambridge, Cambridge CB2 1TN, England Energimaterialens fysik (creator_code:org_t)
- 2021-05-13
- 2021
- English.
-
In: ACS Nano. - : American Chemical Society (ACS). - 1936-0851 .- 1936-086X. ; 15:5, s. 8780-8789
- Related links:
-
https://doi.org/10.1...
-
show more...
-
https://uu.diva-port... (primary) (Raw object)
-
https://pubs.acs.org...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- Structural defects vary the optoelectronic properties of monolayer transition metal dichalcogenides, leading to concerted efforts to control defect type and density via materials growth or postgrowth passivation. Here, we explore a simple chemical treatment that allows on-off switching of low-lying, defect-localized exciton states, leading to tunable emission properties. Using steady-state and ultrafast optical spectroscopy, supported by ab initio calculations, we show that passivation of sulfur vacancy defects, which act as exciton traps in monolayer MoS2 and WS2, allows for controllable and improved mobilities and an increase in photoluminescence up to 275-fold, more than twice the value achieved by other chemical treatments. Our findings suggest a route for simple and rational defect engineering strategies for tunable and switchable electronic and excitonic properties through passivation.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- 2D materials
- defects
- spectroscopy
- many-body perturbation theory
- defect engineering
- TMDC
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
-
ACS Nano
(Search for host publication in LIBRIS)
To the university's database
- By the author/editor
-
Bretscher, Hope
-
Li, Zhaojun
-
Xiao, James
-
Qiu, Diana Yuan
-
Refaely-Abramson ...
-
Alexander-Webber ...
-
show more...
-
Tanoh, Arelo
-
Fan, Ye
-
Delport, Geraud
-
Williams, Cyan A ...
-
Stranks, Samuel ...
-
Hofmann, Stephan
-
Neaton, Jeffrey ...
-
Louie, Steven G.
-
Rao, Akshay
-
show less...
- About the subject
-
- NATURAL SCIENCES
-
NATURAL SCIENCES
-
and Physical Science ...
-
and Condensed Matter ...
- Articles in the publication
-
ACS Nano
- By the university
-
Uppsala University