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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 03484naa a2200433 4500 | |
| 001 | oai:DiVA.org:uu-457922 | |
| 003 | SwePub | |
| 008 | 211104s2021 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-4579222 URI |
| 024 | 7 | a https://doi.org/10.1016/j.mtener.2021.1007182 DOI |
| 040 | a (SwePub)uu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Camut, J.u German Aerosp Ctr DLR, Inst Mat Res, Cologne, Germany.4 aut |
| 245 | 1 0 | a Aluminum as promising electrode for Mg-2(Si,Sn)-based thermoelectric devices |
| 264 | 1 | b Elsevier,c 2021 |
| 338 | a print2 rdacarrier | |
| 520 | a The solid solutions of magnesium silicide and magnesium stannide Mg-2(Si,Sn) are high-performance thermoelectric (TE) materials with the advantage of being composed of light, cheap, and abundant elements. Therefore, they are especially attractive for the conversion of remnant heat into electricity in fields like the automotive sector or the aerospace industry. The optimization of Mg-2(Si,Sn)-based thermoelectric generators requires establishing a suitable electrode to ensure unhindered conduction of the electrical current through the module. We have tested aluminum for such applications and developed a technological process for joining. The obtained functionalized TE legs showed electrical contact resistances below 10 mu Omega cm(2) for both p-and n-type materials and the values are preserved or even lowered with annealing. The p-type material is found to be stable and in the n-type, there is no indication for a charge carrier compensation due to the electrode, as was previously reported e.g. for Cu and Ag. Comparison with other reported electrodes shows that aluminum is so far the most suitable electrode for an Mg-2(Si,Sn)-based module. | |
| 650 | 7 | a NATURVETENSKAPx Kemix Materialkemi0 (SwePub)104032 hsv//swe |
| 650 | 7 | a NATURAL SCIENCESx Chemical Sciencesx Materials Chemistry0 (SwePub)104032 hsv//eng |
| 653 | a Contacting | |
| 653 | a Thermoelectrics | |
| 653 | a Semiconductors | |
| 653 | a Thermoelectric generators | |
| 653 | a Electrode selection | |
| 653 | a Contact resistance | |
| 700 | 1 | a Pham, Ngan Hoangu Uppsala universitet,Fasta tillståndets elektronik,German Aerosp Ctr DLR, Inst Mat Res, Cologne, Germany4 aut0 (Swepub:uu)ngaph453 |
| 700 | 1 | a Truong, D. Y. Nhiu German Aerosp Ctr DLR, Inst Mat Res, Cologne, Germany.4 aut |
| 700 | 1 | a Castillo-Hernandez, G.u German Aerosp Ctr DLR, Inst Mat Res, Cologne, Germany.;Justus Liebig Univ Giessen, Inst Inorgan & Analyt Chem, Giessen, Germany.4 aut |
| 700 | 1 | a Farahi, N.u German Aerosp Ctr DLR, Inst Mat Res, Cologne, Germany.4 aut |
| 700 | 1 | a Yasseri, M.u German Aerosp Ctr DLR, Inst Mat Res, Cologne, Germany.4 aut |
| 700 | 1 | a Mueller, E.u German Aerosp Ctr DLR, Inst Mat Res, Cologne, Germany.;Justus Liebig Univ Giessen, Inst Inorgan & Analyt Chem, Giessen, Germany.4 aut |
| 700 | 1 | a de Boor, J.u German Aerosp Ctr DLR, Inst Mat Res, Cologne, Germany.;Univ Duisburg Essen, Fac Engn, Inst Technol Nanostruct NST, Duisburg, Germany.4 aut |
| 710 | 2 | a German Aerosp Ctr DLR, Inst Mat Res, Cologne, Germany.b Fasta tillståndets elektronik4 org |
| 773 | 0 | t Materials Today Energyd : Elsevierg 21q 21x 2468-6069 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-457922 |
| 856 | 4 8 | u https://doi.org/10.1016/j.mtener.2021.100718 |
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