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SiOx patterned base...
SiOx patterned based substrates implemented in Cu(In,Ga)Se-2 ultrathin solar cells : optimum thickness
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- Oliveira, Kevin (author)
- Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.
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- Chen, Wei-Chao (author)
- Uppsala universitet,Solcellsteknik
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- Lontchi, Jackson (author)
- UCLouvain, ICTEAM Inst, B-1348 Louvain La Neuve, Belgium.
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- Oliveira, Antonio J. N. (author)
- Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.
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- Teixeira, Jennifer P. (author)
- Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.
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- Flandre, Denis (author)
- UCLouvain, ICTEAM Inst, B-1348 Louvain La Neuve, Belgium.
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- Edoff, Marika, 1965- (author)
- Uppsala universitet,Solcellsteknik
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- Fernandes, Paulo A. (author)
- Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Inst Politecn Porto, Inst Super Engn Porto, Dept Fis, CIETI, P-4200072 Porto, Portugal.;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal.
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- Salome, Pedro M. P. (author)
- Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.
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Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal Solcellsteknik (creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2021
- 2021
- English.
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In: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). - : Institute of Electrical and Electronics Engineers (IEEE). - 9781665419222 ; , s. 928-930
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Interface recombination in sub-mu m optoelectronic devices has a major harmful impact in devices performance, showing the need for tailored passivation strategies in order to reach a technological boost. In this work, SiOx based substrates were developed and integrated in ultrathin CIGS solar cells. This study aims at understanding the impact of several SiOx layer thicknesses (3, 8 and 25 nm) when this material is used as a passivation layer. Analysing their electrical parameters, the 8 nm novel SiOx based substrates achieved light to power conversion efficiency values up to 13.2 %, a 1.3 % absolute improvement over the conventional substrate (without SiOx).
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Cu(In
- Ga)Se-2
- SiOx
- Rear Passivation Strategy
Publication and Content Type
- ref (subject category)
- kon (subject category)
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- By the author/editor
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Oliveira, Kevin
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Chen, Wei-Chao
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Lontchi, Jackson
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Oliveira, Antoni ...
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Teixeira, Jennif ...
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Flandre, Denis
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Edoff, Marika, 1 ...
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Fernandes, Paulo ...
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Salome, Pedro M. ...
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- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
- Articles in the publication
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2021 IEEE 48th P ...
- By the university
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Uppsala University