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Dye-sensitized sput...
Dye-sensitized sputtered titanium oxide films for photovoltaic applications : influence of the O2/Ar gas flow ratio during the deposition
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- Gómez, M.M. (author)
- Uppsala universitet,Fysikalisk-kemiska institutionen,Fasta tillståndets fysik
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- Beermann, N. (author)
- Uppsala universitet,Institutionen för materialvetenskap,Fasta tillståndets fysik
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Lu, J. (author)
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Olsson, E. (author)
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- Hagfeldt, Anders (author)
- Uppsala universitet,Fysikalisk-kemiska institutionen
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- Niklasson, G A (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Granqvist, Claes-Göran (author)
- Uppsala universitet,Fasta tillståndets elektronik
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(creator_code:org_t)
- 2003
- 2003
- English.
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In: Solar Energy Materials and Solar Cells. - 0927-0248 .- 1879-3398. ; 76:1, s. 37-56
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Titanium oxide films were prepared by reactive DC magnetron sputtering onto SnO2:F coated glass substrates. The O-2/Ar gas flow ratio was kept at a constant value Gamma during the deposition, and a series of films were deposited with 0.050 < Gamma < 0.072. Structural studies were performed by X-ray diffraction and transmission electron microscopy; the structure displayed penniform features with a clear dependence on F. Charge transport in the films was evaluated by use of time-resolved photocurrents; a diffusion model was fitted to the experimental data and two different transport mechanisms were proposed depending on the film stoichiometry. Dye sensitization in cis-dithiocyanato-bis(2,2'-bipyridyl-4,4'-dicarboxylate) ruthenium (II) was performed to evaluate incident photon-to-current conversion efficiency and solar cell properties of the films. These parameters showed a clear dependence on Gamma. Optical measurements gave evidence for the presence of polaron absorption for the film deposited at Gamma = 0.050.
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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