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Ion sensing with si...
Ion sensing with single charge resolution using sub-10-nm electrical double layer-gated silicon nanowire transistors
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- Hu, Qitao (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Chen, Si, 1982- (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Solomon, Paul (author)
- IBM Corp, Thomas J Watson Res Ctr, POB 704, Yorktown Hts, NY 10598 USA.
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- Zhang, Zhen, 1979- (author)
- Uppsala universitet,Fasta tillståndets elektronik
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(creator_code:org_t)
- American Association for the Advancement of Science (AAAS), 2021
- 2021
- English.
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In: Science Advances. - : American Association for the Advancement of Science (AAAS). - 2375-2548. ; 7:49
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Abstract
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- Electrical sensors have been widely explored for the analysis of chemical/biological species. Ion detection with single charge resolution is the ultimate sensitivity goal of such sensors, which is yet to be experimentally demonstrated. Here, the events of capturing and emitting a single hydrogen ion (H+) at the solid/liquid interface are directly detected using sub-10-nm electrical double layer-gated silicon nanowire field-effect transistors (SiNWFETs). The SiNWFETs are fabricated using a complementary metal-oxide-semiconductor compatible process, with a surface reassembling step to minimize the device noise. An individually activated surface Si dangling bond (DB) acts as the single H+ receptor. Discrete current signals, generated by the single H+-DB interactions via local Coulomb scattering, are directly detected by the SiNWFETs. The single H+-DB interaction kinetics is systematically investigated. Our SiNWFETs demonstrate unprecedented capability for electrical sensing applications, especially for investigating the physics of solid/liquid interfacial interactions at the single charge level.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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