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  • Asad, M. (author)

Graphene FET on Diamond for High-Frequency Electronics

  • Article/chapterEnglish2022

Publisher, publication year, extent ...

  • Institute of Electrical and Electronics Engineers (IEEE),2022
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:uu-466498
  • https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-466498URI
  • https://doi.org/10.1109/led.2021.3139139DOI

Supplementary language notes

  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • Transistors operating at high frequencies are the basic building blocks of millimeter-wave communication and sensor systems. The high charge-carrier mobility and saturation velocity in graphene can open way for ultra-fast field-effect transistors with a performance even better than what can be achieved with III-V-based semiconductors. However, the progress of high-speed graphene transistors has been hampered by fabrication issues, influence of adjacent materials, and self-heating effects. Here, we report on the improved performance of graphene field-effect transistors (GFETs) obtained by using a diamond substrate. An extrinsic maximum frequency of oscillation fmax of up to 54 GHz was obtained for a gate length of 500 nm. Furthermore, the high thermal conductivity of diamond provides an efficient heat-sink, and the relatively high optical phonon energy of diamond contributes to an increased charge-carrier saturation velocity in the graphene channel. Moreover, we show that GFETs on diamond exhibit excellent scaling behavior for different gate lengths. These results promise that the GFET-on-diamond technology has the potential of reaching sub-terahertz frequency performance.

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Added entries (persons, corporate bodies, meetings, titles ...)

  • Majdi, Saman,1977-Uppsala universitet,Elektricitetslära,Diamond Electronics(Swepub:uu)samma947 (author)
  • Vorobiev, A. (author)
  • Jeppson, K. (author)
  • Isberg, Jan,1964-Uppsala universitet,Elektricitetslära(Swepub:uu)jaisb133 (author)
  • Stake, J. (author)
  • Uppsala universitetElektricitetslära (creator_code:org_t)

Related titles

  • In:IEEE Electron Device Letters: Institute of Electrical and Electronics Engineers (IEEE)43:2, s. 300-3030741-31061558-0563

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By the author/editor
Asad, M.
Majdi, Saman, 19 ...
Vorobiev, A.
Jeppson, K.
Isberg, Jan, 196 ...
Stake, J.
About the subject
ENGINEERING AND TECHNOLOGY
ENGINEERING AND ...
and Electrical Engin ...
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IEEE Electron De ...
By the university
Uppsala University

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