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Graphene FET on Dia...
Graphene FET on Diamond for High-Frequency Electronics
- Article/chapterEnglish2022
Publisher, publication year, extent ...
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Institute of Electrical and Electronics Engineers (IEEE),2022
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Numbers
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LIBRIS-ID:oai:DiVA.org:uu-466498
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https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-466498URI
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https://doi.org/10.1109/led.2021.3139139DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Transistors operating at high frequencies are the basic building blocks of millimeter-wave communication and sensor systems. The high charge-carrier mobility and saturation velocity in graphene can open way for ultra-fast field-effect transistors with a performance even better than what can be achieved with III-V-based semiconductors. However, the progress of high-speed graphene transistors has been hampered by fabrication issues, influence of adjacent materials, and self-heating effects. Here, we report on the improved performance of graphene field-effect transistors (GFETs) obtained by using a diamond substrate. An extrinsic maximum frequency of oscillation fmax of up to 54 GHz was obtained for a gate length of 500 nm. Furthermore, the high thermal conductivity of diamond provides an efficient heat-sink, and the relatively high optical phonon energy of diamond contributes to an increased charge-carrier saturation velocity in the graphene channel. Moreover, we show that GFETs on diamond exhibit excellent scaling behavior for different gate lengths. These results promise that the GFET-on-diamond technology has the potential of reaching sub-terahertz frequency performance.
Subject headings and genre
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Majdi, Saman,1977-Uppsala universitet,Elektricitetslära,Diamond Electronics(Swepub:uu)samma947
(author)
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Vorobiev, A.
(author)
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Jeppson, K.
(author)
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Isberg, Jan,1964-Uppsala universitet,Elektricitetslära(Swepub:uu)jaisb133
(author)
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Stake, J.
(author)
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Uppsala universitetElektricitetslära
(creator_code:org_t)
Related titles
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In:IEEE Electron Device Letters: Institute of Electrical and Electronics Engineers (IEEE)43:2, s. 300-3030741-31061558-0563
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