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Microscopic insight...
Microscopic insight into the impact of the KF post-deposition treatment on optoelectronic properties of (Ag,Cu)(In,Ga)Se2 solar cells
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- Krause, Maximilian (author)
- Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany.
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- Marquez, José A. (author)
- Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany.
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- Levcenco, Sergej (author)
- Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany.
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- Unold, Thomas (author)
- Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany.
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- Donzel-Gargand, Olivier (author)
- Uppsala universitet,Solcellsteknik
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- Edoff, Marika, 1965- (author)
- Uppsala universitet,Solcellsteknik
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- Abou-Ras, Daniel (author)
- Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany.
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Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany Solcellsteknik (creator_code:org_t)
- 2021-09-22
- 2022
- English.
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In: Progress in Photovoltaics. - : John Wiley & Sons. - 1062-7995 .- 1099-159X. ; 30:1, s. 109-115
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Abstract
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- It is attractive to alloy Cu(In,Ga)Se2 solar-cell absorbers with Ag (ACIGSe), since they lead to similar device performances as the Ag-free absorber layers, while they can be synthesized at much lower deposition temperatures. However, a KF post-deposition treatment (PDT) of the ACIGSe absorber surface is necessary to achieve higher open-circuit voltages (Voc). The present work provides microscopic insights to the effects of this KF PDT, employing correlative scanning-electron microscope techniques on identical positions of cross-sectional specimens of the cell stacks. We found that the increase in Voc after the KF PDT can be explained by the removal of Cu-poor, Ag-poor, and Ga-rich regions near the ACIGSe/CdS interface. The KF PDT leads, when optimally doped, to a very thin K-Ag-Cu-Ga-In-Se layer between ACIGSe and CdS. If the KF dose is too large, we find that Cu-poor and K-rich regions form near the ACIGSe/CdS interface with enhanced nonradiative recombination which explains a decrease in the Voc. This effect occurs in addition to the presence of a (K,Ag,Cu)InSe2 intermediate layer, that might be responsible for limiting the short-current density of the solar cells due to a current blocking behavior.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Naturresursteknik -- Energisystem (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Environmental Engineering -- Energy Systems (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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