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Gettering in PolySi/SiOx Passivating Contacts Enables Si-Based Tandem Solar Cells with High Thermal and Contamination Resilience

Assar, Alireza (author)
Tech Univ Denmark, Natl Ctr Nanofabricat & Characterizat, DTU Nanolab, DK-2800 Lyngby, Denmark.
Martinho, Filipe (author)
Tech Univ Denmark, Dept Photon Engn, DK-4000 Roskilde, Denmark.
Larsen, Jes K. (author)
Uppsala universitet,Solcellsteknik
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Saini, Nishant (author)
Uppsala Univ, Dept Mat Sci & Engn, Div Solar Cell Technol, S-75236 Uppsala, Sweden.
Shearer, Denver (author)
Tech Univ Denmark, Natl Ctr Nanofabricat & Characterizat, DTU Nanolab, DK-2800 Lyngby, Denmark.
Moro, Marcos V. (author)
Uppsala universitet,Tillämpad kärnfysik
Stulen, Fredrik (author)
Univ Oslo, Dept Phys, N-0371 Oslo, Norway.
Grini, Sigbjorn (author)
Univ Oslo, Dept Phys, N-0371 Oslo, Norway.
Engberg, Sara (author)
Tech Univ Denmark, Dept Photon Engn, DK-4000 Roskilde, Denmark.
Stamate, Eugen (author)
Tech Univ Denmark, Natl Ctr Nanofabricat & Characterizat, DTU Nanolab, DK-2800 Lyngby, Denmark.
Schou, Jorgen (author)
Tech Univ Denmark, Dept Photon Engn, DK-4000 Roskilde, Denmark.
Vines, Lasse (author)
Univ Oslo, Dept Phys, N-0371 Oslo, Norway.
Canulescu, Stela (author)
Tech Univ Denmark, Dept Photon Engn, DK-4000 Roskilde, Denmark.
Platzer Björkman, Charlotte, 1976- (author)
Uppsala universitet,Fasta tillståndets elektronik,Solcellsteknik
Hansen, Ole (author)
Tech Univ Denmark, Natl Ctr Nanofabricat & Characterizat, DTU Nanolab, DK-2800 Lyngby, Denmark.
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Tech Univ Denmark, Natl Ctr Nanofabricat & Characterizat, DTU Nanolab, DK-2800 Lyngby, Denmark Tech Univ Denmark, Dept Photon Engn, DK-4000 Roskilde, Denmark. (creator_code:org_t)
2022-03-17
2022
English.
In: ACS Applied Materials and Interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 14:12, s. 14342-14358
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Multijunction solar cells in a tandem configuration could further lower the costs of electricity if crystalline Si (c-Si) is used as the bottom cell. However, for direct monolithic integration on c-Si, only a restricted number of top and bottom cell architectures are compatible, due to either epitaxy or high-temperature constraints, where the interface between subcells is subject to a trade-off between transmittance, electrical interconnection, and bottom cell degradation. Using polySi/SiOx passivating contacts for Si, this degradation can be largely circumvented by tuning the polySi/SiOx stacks to promote gettering of contaminants admitted into the Si bottom cell during the top cell synthesis. Applying this concept to the low-cost top cell chalcogenides Cu2ZnSnS4 (CZTS), CuGaSe2 (CGSe), and AgInGaSe2 (AIGSe), fabricated under harsh S or Se atmospheres above 550 degrees C, we show that increasing the heavily doped polySi layer thickness from 40 to up to 400 nm prevents a reduction in Si carrier lifetime by 1 order of magnitude, with final lifetimes above 500 mu s uniformly across areas up to 20 cm(2). In all cases, the increased resilience was correlated with a 99.9% reduction in contaminant concentration in the c-Si bulk, provided by the thick polySi layer, which acts as a buried gettering layer in the tandem structure without compromising the Si passivation quality. The Si resilience decreased as AIGSe > CGSe > CZTS, in accordance with the measured Cu contamination profiles and higher annealing temperatures. An efficiency of up to 7% was achieved for a CZTS/Si tandem, where the Si bottom cell is no longer the limiting factor.

Subject headings

NATURVETENSKAP  -- Kemi -- Materialkemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences -- Materials Chemistry (hsv//eng)
NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

tandem
gettering
chalcogenides
Si
TOPCon

Publication and Content Type

ref (subject category)
art (subject category)

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