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Low-frequency noise...
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Smulko, J.Gdansk Univ Technol, Fac Elect Telecommun & Informat, Dept Metrol & Optoelect, G Narutowicza 11-12, PL-80233 Gdansk, Poland.
(author)
Low-frequency noise in Au-decorated graphene-Si Schottky barrier diode at selected ambient gases
- Article/chapterEnglish2023
Publisher, publication year, extent ...
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AIP Publishing,2023
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printrdacarrier
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LIBRIS-ID:oai:DiVA.org:uu-506980
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https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-506980URI
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https://doi.org/10.1063/5.0152456DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
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We report results of the current-voltage characteristics and low-frequency noise in Au nanoparticle (AuNP)-decorated graphene-Si Schottky barrier diodes. Measurements were conducted in ambient air with addition of either of two organic vapors, tetrahydrofuran [(CH2)(4)O; THF] and chloroform (CHCl3), as also during yellow light illumination (592 nm), close to the measured particle plasmon polariton frequency of the Au nanoparticle layer. We observed a shift of the DC characteristics at forward voltages (forward resistance region) when tetrahydrofuran vapor was admitted (in a Au-decorated graphene-Si Schottky diode), and a tiny shift under yellow irradiation when chloroform was added (in not decorated graphene-Si Schottky diode). Significantly larger difference in the low-frequency noise was observed for the two gases during yellow light irradiation, compared with no illumination. The noise intensity was suppressed by AuNPs when compared with noise in graphene-Si Schottky diode without an AuNP layer. We conclude that flicker noise generated in the investigated Au-decorated Schottky diodes can be utilized for gas detection.
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Drozdowska, K.Gdansk Univ Technol, Fac Elect Telecommun & Informat, Dept Metrol & Optoelect, G Narutowicza 11-12, PL-80233 Gdansk, Poland.
(author)
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Rehman, A.PAS, CENTERA Labs, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland.
(author)
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Welearegay, TesfalemUppsala universitet,Fasta tillståndets fysik(Swepub:uu)teswe793
(author)
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Österlund, Lars,1967-Uppsala universitet,Fasta tillståndets fysik(Swepub:uu)laros288
(author)
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Rumyantsev, S.PAS, CENTERA Labs, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland.
(author)
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Cywinski, G.PAS, CENTERA Labs, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland.
(author)
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Stonio, B.PAS, CENTERA Labs, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland.;Warsaw Univ Technol, Ctr Adv Mat & Technol CEZAMAT, Poleczki 19, PL-02822 Warsaw, Poland.
(author)
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Krajewska, A.PAS, CENTERA Labs, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland.
(author)
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Filipiak, M.PAS, CENTERA Labs, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland.;Warsaw Univ Technol, Ctr Adv Mat & Technol CEZAMAT, Poleczki 19, PL-02822 Warsaw, Poland.
(author)
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Sai, P.PAS, CENTERA Labs, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland.
(author)
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Gdansk Univ Technol, Fac Elect Telecommun & Informat, Dept Metrol & Optoelect, G Narutowicza 11-12, PL-80233 Gdansk, Poland.PAS, CENTERA Labs, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland.
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In:Applied Physics Letters: AIP Publishing122:210003-69511077-3118
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Smulko, J.
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Drozdowska, K.
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Rehman, A.
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Welearegay, Tesf ...
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Österlund, Lars, ...
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Rumyantsev, S.
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Cywinski, G.
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Stonio, B.
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Krajewska, A.
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Filipiak, M.
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Sai, P.
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