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Is it meaningful to quantify vacancy concentrations of nanolamellar (Ti,Al)N thin films based on laser-assisted atom probe data?

Hans, Marcus (author)
Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany.
Tkadletz, Michael (author)
Univ Leoben, Dept Mat Sci, Franz Josef Str 18, A-8700 Leoben, Austria.
Primetzhofer, Daniel (author)
Uppsala universitet,Tillämpad kärnfysik
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Waldl, Helene (author)
Montanunivers Leoben, Christian Doppler Lab Adv Coated Cutting Tools, Franz Josef St 18, A-8700 Leoben, Austria.
Schiester, Maximilian (author)
Mat Ctr Leoben Forsch GmbH, Roseggerstr 12, A-8700 Leoben, Austria.
Bartosik, Matthias (author)
Univ Leoben, Dept Mat Sci, Franz Josef Str 18, A-8700 Leoben, Austria.
Czettl, Christoph (author)
Ceratizit Austria GmbH, Metallwerk Plansee Str 71, A-6600 Reutte, Austria.
Schalk, Nina (author)
Montanunivers Leoben, Christian Doppler Lab Adv Coated Cutting Tools, Franz Josef St 18, A-8700 Leoben, Austria.
Mitterer, Christian (author)
Univ Leoben, Dept Mat Sci, Franz Josef Str 18, A-8700 Leoben, Austria.
Schneider, Jochen M. (author)
Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany.
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Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany Univ Leoben, Dept Mat Sci, Franz Josef Str 18, A-8700 Leoben, Austria. (creator_code:org_t)
Elsevier, 2023
2023
English.
In: Surface & Coatings Technology. - : Elsevier. - 0257-8972 .- 1879-3347. ; 473
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Recently, it was proposed to quantify vacancy concentrations based on laser-assisted atom probe tomography (APT) data for a (Ti,Al)N film with a nanolamellar architecture, grown by chemical vapor deposition. To determine, whether vacancy concentrations can be reliably estimated based on APT data, we systematically compare measurements with an ultraviolet (UV) as well as a green laser to ion beam analysis data. First, monolithic TiN and AlN films, which are stoichiometric within the measurement uncertainties of ion beam analysis, are investigated. In case of TiN an electric field strength of 39.4 V nm  1 and a nitrogen content of 49.0 at.%, consistent with ion beam analysis data, is obtained with both lasers, when using pulse energies of 5 pJ (UV laser) and 0.1 nJ (green laser). However, significant differences can be observed for monolithic AlN as nitrogen contents from 41.9 to 35.8 at.% and 48.4 to 41.4 at.% are measured, depending on variations of the pulse en-ergies of the UV and green laser, respectively. In order to mimic a nanolamellar architecture for correlative compositional analysis by ion beam analysis and laser-assisted APT, a TiN/AlN/TiN trilayer film is synthesized and significant deviations with respect to the nitrogen content are evident for the AlN layer. While the average nitrogen concentration from ion beam analysis is 51 at.%, nitrogen contents from laser-assisted APT data are only 38 at.% (UV laser) or 41 at.% (green laser). Hence, the nitrogen content of the AlN layer is underestimated from laser-assisted APT data by at least 10 and up to 13 at.% and this significant discrepancy cannot be explained by the measurement uncertainties. Thus, the here presented data emphasize that it is not meaningful to quantify vacancy concentrations of nanolamellar (Ti,Al)N thin films solely based on atom probe data, since the measurement accuracy depends on the field evaporation conditions.

Subject headings

NATURVETENSKAP  -- Kemi -- Materialkemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences -- Materials Chemistry (hsv//eng)

Keyword

Transition metal nitrides
Atom probe tomography
Defects
Accuracy

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art (subject category)

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