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Influence of the Heat Treatment on the Layer JC of Internal-Sn Nb3Sn Wires With Internally Oxidized Nanoparticles

Lonardo, F. (author)
Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
Bovone, G. (author)
Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
Buta, F. (author)
Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
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Bonura, M. (author)
Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
Bagni, Tommaso (author)
Uppsala universitet,FREIA,Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
Medina-Clavijo, B. (author)
European Organization for Nuclear Research, CERN, Geneva, Switzerland
Ballarino, A. (author)
European Organization for Nuclear Research, CERN, Geneva, Switzerland
Hopkins, S. C. (author)
European Organization for Nuclear Research, CERN, Geneva, Switzerland
Boutboul, T. (author)
European Organization for Nuclear Research, CERN, Geneva, Switzerland
Senatore, C. (author)
Department of Quantum Matter Physics and the Department of Nuclear and Particle Physics, University of Geneva, Geneva, Switzerland
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 (creator_code:org_t)
Institute of Electrical and Electronics Engineers (IEEE), 2024
2024
English.
In: IEEE transactions on applied superconductivity (Print). - : Institute of Electrical and Electronics Engineers (IEEE). - 1051-8223 .- 1558-2515. ; 34:5
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • We evaluated various heat treatments (HT) for maximizing the Nb 3 Sn layer thickness while retaining a refined grain microstructure in low filament count internal-Sn Nb 3 Sn Rod-In-Tube wires with internally oxidized nanoparticles. These wires were manufactured in our laboratory using SnO 2 as oxygen source and Nb alloys containing Ta and Zr or Hf. By reacting the wires at 650 °C for 200 hours we obtained relatively thin reaction layers but high layer critical current densities (layer J C ) of ∼3000 A/mm 2 for Hf-containing wires and ∼2700 A/mm 2 for Zr-containing wires, both at 4.2 K and 16 T. Notably, both of these values are over the layer J C threshold of 2500 A/mm 2 , which is estimated to be necessary for attaining the corresponding Future Circular Collider (FCC) target non-Cu J C of 1500 A/mm 2 . Following this heat treatment, the fine-grained Nb 3 Sn area occupies only ∼35% of the filament area for Hf-containing wires and ∼20% for Zr-containing wires. After heat treatments with a reaction step at 700 °C these values increase to 70–80% and ∼60%, respectively, with only a minor increase of the grain size. However, we observed a noticeable decrease in the layer J C for these HT. Magnetic measurements show that the high J C wires exhibit a point defect contribution from precipitates to the pinning force, which is missing in wires with depressed J C values. The higher heat treatment temperatures may have caused excessive coarsening of the oxide precipitates, to sizes unsuitable for flux pinning. Reaction heat treatment temperatures in the range of 650 °C to 700 °C and durations between 50 and 200 hours may provide a better compromise between the Nb 3 Sn layer thickness, its grain size and nanoparticle size.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Metallurgi och metalliska material (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Metallurgy and Metallic Materials (hsv//eng)

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