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An all phosphorene lattice nanometric spin valve

Kumari, P. (author)
Indian Inst Technol Patna, Dept Phys, Bihta 801103, India.
Majumder, S. (author)
Indian Inst Technol Patna, Dept Phys, Bihta 801103, India.
Kar, S. (author)
Indian Inst Technol Patna, Dept Phys, Bihta 801103, India.
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Rani, S. (author)
Indian Inst Technol Patna, Dept Phys, Bihta 801103, India.
Nair, A. K. (author)
Indian Inst Technol Patna, Dept Phys, Bihta 801103, India.
Kumari, K. (author)
Indian Inst Technol Patna, Dept Phys, Bihta 801103, India.
Kamalakar, M. Venkata (author)
Uppsala universitet,Energimaterialens fysik
Ray, S. J. (author)
Indian Inst Technol Patna, Dept Phys, Bihta 801103, India.
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Indian Inst Technol Patna, Dept Phys, Bihta 801103, India Energimaterialens fysik (creator_code:org_t)
Springer Nature, 2024
2024
English.
In: Scientific Reports. - : Springer Nature. - 2045-2322. ; 14:1
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Phosphorene is a unique semiconducting two-dimensional platform for enabling spintronic devices integrated with phosphorene nanoelectronics. Here, we have designed an all phosphorene lattice lateral spin valve device, conceived via patterned magnetic substituted atoms of 3d-block elements at both ends of a phosphorene nanoribbon acting as ferromagnetic electrodes in the spin valve. Through First-principles based calculations, we have extensively studied the spin-dependent transport characteristics of the new spin valve structures. Systematic exploration of the magnetoresistance (MR) of the spin valve for various substitutional atoms and bias voltage resulted in a phase diagram offering a colossal MR for V and Cr-substitutional atoms. Such MR can be directly attributed to their specific electronic structure, which can be further tuned by a gate voltage, for electric field controlled spin valves. The spin-dependent transport characteristics here reveal new features such as negative conductance oscillation and switching of the sign of MR due to change in the majority spin carrier type. Our study creates possibilities for the design of nanometric spin valves, which could enable integration of memory and logic elements for all phosphorene 2D processors.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Nanoelectronics
Spintronics
2D magnet

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