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Bulk and interface ...
Bulk and interface Al 2p core excitons in GaAs/AlAs/GaAs heterostructures
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- Agui, A (author)
- Uppsala universitet
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- Shin, S (author)
- Uppsala universitet
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- Wu, C (author)
- Uppsala universitet
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- Shiba, K (author)
- Uppsala universitet
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- Inoue, K (author)
- Uppsala universitet
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(creator_code:org_t)
- AMERICAN PHYSICAL SOC, 1999
- 1999
- English.
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In: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMERICAN PHYSICAL SOC. - 0163-1829. ; 59:16, s. 10792-10795
- Related links:
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https://urn.kb.se/re...
Abstract
Subject headings
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- Aluminum 2p soft-x-ray emission and absorption spectra (XES and XAS) of a GaAs/AIAs/GaAs heterostructure semiconductor have been measured with high-energy resolution. The Al 2p XES shows a similar feature to that of AlxGa1-xAs alloys. Strong Al 2p core ex
Keyword
- X-RAY-EMISSION; ELECTRONIC-STRUCTURE; II SUPERLATTICES; QUANTUM-WELLS; ALXGA1-XAS; SEMICONDUCTORS; ABSORPTION; LAYERS
Publication and Content Type
- vet (subject category)
- art (subject category)
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