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Defect evolution in...
Defect evolution in MeV ion-implanted silicon
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- Lalita, J (author)
- Uppsala universitet
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- Keskitalo, N (author)
- Uppsala universitet
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- Hallen, A (author)
- Uppsala universitet
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- Jagadish, C (author)
- Uppsala universitet
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- Svensson, BG (author)
- Uppsala universitet
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(creator_code:org_t)
- ELSEVIER SCIENCE BV, 1996
- 1996
- English.
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In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. - : ELSEVIER SCIENCE BV. - 0168-583X. ; 120:1-4, s. 27-32
- Related links:
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https://urn.kb.se/re...
Abstract
Subject headings
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- Lightly doped silicon samples of both n- and p-type, have been implanted with low doses of H, B and Si ions using energies between 1 and 6 MeV. The resulting electrically active point defects were characterized by deep level transient spectroscopy (DLTS)
Keyword
- LEVEL TRANSIENT SPECTROSCOPY; INTERSTITIAL CARBON; CRYSTALLINE SILICON; IRRADIATED SILICON; ELECTRON TRAPS; OXYGEN COMPLEX; POINT-DEFECTS; DOPED SILICON; DIFFUSION; SI
Publication and Content Type
- vet (subject category)
- art (subject category)
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