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Simulation of forward bias injection in proton irradiated silicon pn-junctions
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- Keskitalo, Niklas (author)
- Uppsala universitet,Institutionen för materialvetenskap,Elektronik
- Hallen, A (author)
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- Masszi, Ference (author)
- Uppsala universitet,Institutionen för materialvetenskap,Elektronik
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- Elsevier BV, 1996
- 1996
- English.
- In: Solid-State Electronics. - : Elsevier BV. - 0038-1101. ; 39:7, s. 1087-1092
- Journal article (peer-reviewed)
Abstract
Subject headings
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- A multilevel recombination model is implemented in the simulation program MEDICI to simulate proton irradiated silicon. First the model is used to simulate charge carrier distributions in proton irradiated silicon p(+)n-diodes in order to evaluate deep le
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- DOPED SILICON
- Electronics
- Elektronik
Publication and Content Type
- ref (subject category)
- art (subject category)
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- Solid-State Electronics (Search for host publication in LIBRIS)
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