SwePub
Sök i LIBRIS databas

  Extended search

onr:"swepub:oai:DiVA.org:uu-82072"
 

Search: onr:"swepub:oai:DiVA.org:uu-82072" > Modelling of single...

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist

Modelling of single-crystal diamond Schottky diodes for high-voltage applications

Rashid, S. J. (author)
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK
Tajani, A. (author)
Element Six Ltd., King's Ride Park, Ascot, Berkshire SL5 8BP, UK
Coulbeck, L. (author)
Dynex Semiconductors Ltd., Doddington Road, Lincoln LN6 3LF, UK
show more...
Brezeanu, M. (author)
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK
Garraway, A. (author)
Dynex Semiconductors Ltd., Doddington Road, Lincoln LN6 3LF, UK
Butler, T. (author)
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK
Rupesinghe, N. L. (author)
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK
Twitchen, D. J. (author)
Element Six Ltd., King's Ride Park, Ascot, Berkshire SL5 8BP, UK
Amaratunga, G. A. J. (author)
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK
Udrea, F. (author)
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK
Taylor, P. (author)
Dynex Semiconductors Ltd., Doddington Road, Lincoln LN6 3LF, UK
Dixon, M. (author)
Element Six Ltd., King's Ride Park, Ascot, Berkshire SL5 8BP, UK
Isberg, Jan (author)
Uppsala universitet,Elektricitetslära,Avdelningen för elektricitetslära och åskforskning
show less...
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK Element Six Ltd, King's Ride Park, Ascot, Berkshire SL5 8BP, UK (creator_code:org_t)
Elsevier BV, 2006
2006
English.
In: Diamond and related materials. - : Elsevier BV. - 0925-9635 .- 1879-0062. ; 15, s. 317-323
  • Journal article (peer-reviewed)
Abstract Subject headings
Close  
  • The modelling of Schottky m-i-p(+) (SMIP) diodes fabricated on chemical vapour deposited (CVD) single crystal (SC) diamond intrinsic layers grown on highly boron doped CVD diamond Substrates is reported. Variations in intrinsic layer thickness, Schottky metal type and operating temperature have been included in the analysis. Numerical models that take into account the activation of dopants, concentration and temperature dependant mobility and avalanche coefficients have been derived to successfully simulate experimental diamond devices.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Diamond
Electronic Devices
Numerical Modelling
Teknisk fysik med inriktning mot elektricitetslära
Engineering Science with specialization in Science of Electricity

Publication and Content Type

ref (subject category)
art (subject category)

Find in a library

To the university's database

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view