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Modelling of single...
Modelling of single-crystal diamond Schottky diodes for high-voltage applications
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- Rashid, S. J. (author)
- Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK
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- Tajani, A. (author)
- Element Six Ltd., King's Ride Park, Ascot, Berkshire SL5 8BP, UK
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- Coulbeck, L. (author)
- Dynex Semiconductors Ltd., Doddington Road, Lincoln LN6 3LF, UK
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- Brezeanu, M. (author)
- Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK
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- Garraway, A. (author)
- Dynex Semiconductors Ltd., Doddington Road, Lincoln LN6 3LF, UK
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- Butler, T. (author)
- Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK
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- Rupesinghe, N. L. (author)
- Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK
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- Twitchen, D. J. (author)
- Element Six Ltd., King's Ride Park, Ascot, Berkshire SL5 8BP, UK
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- Amaratunga, G. A. J. (author)
- Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK
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- Udrea, F. (author)
- Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK
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- Taylor, P. (author)
- Dynex Semiconductors Ltd., Doddington Road, Lincoln LN6 3LF, UK
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- Dixon, M. (author)
- Element Six Ltd., King's Ride Park, Ascot, Berkshire SL5 8BP, UK
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- Isberg, Jan (author)
- Uppsala universitet,Elektricitetslära,Avdelningen för elektricitetslära och åskforskning
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Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK Element Six Ltd, King's Ride Park, Ascot, Berkshire SL5 8BP, UK (creator_code:org_t)
- Elsevier BV, 2006
- 2006
- English.
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In: Diamond and related materials. - : Elsevier BV. - 0925-9635 .- 1879-0062. ; 15, s. 317-323
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The modelling of Schottky m-i-p(+) (SMIP) diodes fabricated on chemical vapour deposited (CVD) single crystal (SC) diamond intrinsic layers grown on highly boron doped CVD diamond Substrates is reported. Variations in intrinsic layer thickness, Schottky metal type and operating temperature have been included in the analysis. Numerical models that take into account the activation of dopants, concentration and temperature dependant mobility and avalanche coefficients have been derived to successfully simulate experimental diamond devices.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Diamond
- Electronic Devices
- Numerical Modelling
- Teknisk fysik med inriktning mot elektricitetslära
- Engineering Science with specialization in Science of Electricity
Publication and Content Type
- ref (subject category)
- art (subject category)
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- By the author/editor
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Rashid, S. J.
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Tajani, A.
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Coulbeck, L.
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Brezeanu, M.
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Garraway, A.
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Butler, T.
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show more...
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Rupesinghe, N. L ...
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Twitchen, D. J.
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Amaratunga, G. A ...
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Udrea, F.
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Taylor, P.
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Dixon, M.
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Isberg, Jan
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- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
- Articles in the publication
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Diamond and rela ...
- By the university
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Uppsala University