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Integration of GMR-based spin torque oscillators and CMOS circuitry

Chen, Tingsu (author)
KTH,Integrerade komponenter och kretsar
Eklund, Anders (author)
KTH,Integrerade komponenter och kretsar
Redjai Sani, Sohrab (author)
KTH,Material- och nanofysik
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Rodriguez, Saul (author)
KTH,Integrerade komponenter och kretsar
Malm, B. Gunnar (author)
KTH,Integrerade komponenter och kretsar
Åkerman, Johan, 1970 (author)
KTH,Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),Materialfysik, MF,University of Gothenburg, Sweden
Rusu, Ana (author)
KTH,Integrerade komponenter och kretsar
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 (creator_code:org_t)
Elsevier BV, 2015
2015
English.
In: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 111, s. 91-99
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • This paper demonstrates the integration of giant magnetoresistance (GMR) spin torque oscillators (STO) with dedicated high frequency CMOS circuits. The wire-bonding-based integration approach is employed in this work, since it allows easy implementation, measurement and replacement. A GMR STO is wire-bonded to the dedicated CMOS integrated circuit (IC) mounted on a PCB, forming a (GMR STO + CMOS IC) pair. The GMR STO has a lateral size of 70 nm and more than an octave of tunability in the microwave frequency range. The proposed CMOS IC provides the necessary bias-tee for the GMR STO, as well as electrostatic discharge (ESD) protection and wideband amplification targeting high frequency GMR STO-based applications. It is implemented in a 65 nm CMOS process, offers a measured gain of 12 dB, while consuming only 14.3 mW and taking a total silicon area of 0.329 mm(2). The measurement results show that the (GMR STO + CMOS IC) pair has a wide tunability range from 8 GHz to 16.5 GHz and improves the output power of the GMR STO by about 10 dB. This GMR STO-CMOS integration eliminates wave reflections during the signal transmission and therefore exhibits good potential for developing high frequency GMR STO-based applications, which combine the features of CMOS and STO technologies. (C) 2015 Elsevier Ltd. All rights reserved.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

CMOS
Giant magnetoresistance
Integration
On-chip bias-tee
Spin torque oscillator
Wire bonding
FIELD
Engineering
Electrical & Electronic
Physics
Applied
Physics
Condensed Matter
CMOS

Publication and Content Type

ref (subject category)
art (subject category)

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