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Influence of MgO ba...
Influence of MgO barrier quality on spin-transfer torque in magnetic tunnel junctions
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Tiwari, D. (author)
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Sharma, R. (author)
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Heinonen, O. G. (author)
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- Åkerman, Johan, 1970 (author)
- KTH,Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),Tillämpad fysik,University of Gothenburg, Sweden
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Muduli, P. K. (author)
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(creator_code:org_t)
- AIP Publishing, 2018
- 2018
- English.
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 112:2
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Abstract
Subject headings
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- We studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratio and hence the barrier quality. Published by AIP Publishing.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
- NATURVETENSKAP -- Fysik -- Annan fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Other Physics Topics (hsv//eng)
Keyword
- voltage-dependence
- magnetoresistance
- emission
- Physics
Publication and Content Type
- ref (subject category)
- art (subject category)
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