Spin Hall Nano-Oscillator Empirical Electrical Model for Optimal On-Chip Detector Design

• As nascent nonlinear oscillators, nano-constriction spin Hall nano-oscillators (SHNOs) represent a promising potential for integration into more complicated systems such as neural networks, magnetic field sensors, and radio frequency (RF) signal classification. Their tunable high-frequency operating regime, easy synchronization, and CMOS compatibility can streamline the process. To implement SHNOs in any of these networks, the electrical features of a single device are needed before designing the signal detection CMOS circuitry. This study centers on presenting an empirical electrical model of the SHNO based on a comprehensive characterization of the output impedance of a single SHNO and its available output power in the range of 2-10 GHz at various bias currents.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Keyword

Detectors

Impedance

Noise

Signal to noise ratio

Power generation

Oscillators

Impedance measurement

CMOS

empirical electrical model

impedance

signal detection

spin Hall nano-oscillators (SHNOs)

Publication and Content Type

ref (subject category)

art (subject category)