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Spin Hall Nano-Osci...
Spin Hall Nano-Oscillator Empirical Electrical Model for Optimal On-Chip Detector Design
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Fiorelli, Rafaella (author)
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Rajabali, Mona (author)
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Mendez-Romero, Roberto (author)
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- Kumar, Akash (author)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU)
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- Litvinenko, Artem, 1989 (author)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU)
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Serrano-Gotarredona, Teresa (author)
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Moradi, Farshad (author)
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Akerman, Johan (author)
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Linares-Barranco, Bernabe (author)
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Peralias, Eduardo (author)
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(creator_code:org_t)
- 2024
- 2024
- English.
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In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - 0018-9383 .- 1557-9646. ; 71:8, s. 4920-4925
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Abstract
Subject headings
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- As nascent nonlinear oscillators, nano-constriction spin Hall nano-oscillators (SHNOs) represent a promising potential for integration into more complicated systems such as neural networks, magnetic field sensors, and radio frequency (RF) signal classification. Their tunable high-frequency operating regime, easy synchronization, and CMOS compatibility can streamline the process. To implement SHNOs in any of these networks, the electrical features of a single device are needed before designing the signal detection CMOS circuitry. This study centers on presenting an empirical electrical model of the SHNO based on a comprehensive characterization of the output impedance of a single SHNO and its available output power in the range of 2-10 GHz at various bias currents.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- Detectors
- Impedance
- Noise
- Signal to noise ratio
- Power generation
- Oscillators
- Impedance measurement
- CMOS
- empirical electrical model
- impedance
- signal detection
- spin Hall nano-oscillators (SHNOs)
Publication and Content Type
- ref (subject category)
- art (subject category)
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